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IXYS MDI75-12A3

  • MDI75-12A3
  • MDI75-12A3 Insulated Gate Bipolar Transistor, 90A I(C), 1200V V(BR)CES, N-Channel, MODULE-7; MDI75-12A3

    · Categories: IGBT
    · Manufacturer: IXYS
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 1278
    MOQ: 1 PC
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    Content last revised on May 1, 2023

    Manufacturer Part Number: MDI75-12A3Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X5Pin Count: 7Manufacturer: IXYS CorporationRisk Rank: 5.7Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 90 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X5Number of Elements: 1Number of Terminals: 5Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 415 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 90A I(C), 1200V V(BR)CES, N-Channel, MODULE-7