#IXYS, #MII400_12E4, #IGBT_Module, #IGBT, MII400-12E4 Insulated Gate Bipolar Transistor, 420A I(C), 1200V V(BR)CES, N-Channel, MODULE-7; MII400-12E4
Manufacturer Part Number: MII400-12E4Rohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X7Pin Count: 7Manufacturer: IXYS CorporationRisk Rank: 5.81Case Connection: ISOLATEDCollector Current-Max (IC): 420 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X7Number of Elements: 2Number of Terminals: 7Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 1700 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 420A I(C), 1200V V(BR)CES, N-Channel, MODULE-7