#IXYS, #MIXA80W1200TEH, #IGBT_Module, #IGBT, MIXA80W1200TEH Insulated Gate Bipolar Transistor, 120A I(C), 1200V V(BR)CES, N-Channel, MODULE-35; MIXA80W1200TEH
Manufacturer Part Number: MIXA80W1200TEHRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X13Pin Count: 35Manufacturer: IXYS CorporationRisk Rank: 5.65Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 120 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X13Number of Elements: 6Number of Terminals: 13Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 390 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 350 nsTurn-on Time-Nom (ton): 110 nsVCEsat-Max: 2.1 V Insulated Gate Bipolar Transistor, 120A I(C), 1200V V(BR)CES, N-Channel, MODULE-35