#ON Semiconductor, #MJB44H11G, #IGBT_Module, #IGBT, MJB44H11G Bipolar Power Transistor, NPN, 10 A, 80 V, 50 Watt, D2PAK 2 LEAD, 50-TUBE; MJB44H11G
Manufacturer Part Number: MJB44H11GBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PSSO-G2Pin Count: 3Manufacturer Package Code: 418B-04ECCN Code: EAR99HTS Code: 8541.29.00.75Manufacturer: ON SemiconductorRisk Rank: 0.7Case Connection: COLLECTORCollector Current-Max (IC): 10 ACollector-Emitter Voltage-Max: 80 VConfiguration: SINGLEDC Current Gain-Min (hFE): 40JESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: NPNPower Dissipation-Max (Abs): 50 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: GULL WINGTerminal Position: SINGLETime Bipolar Power Transistor, NPN, 10 A, 80 V, 50 Watt, D2PAK 2 LEAD, 50-TUBE