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ON Semiconductor MJD112-001

  • MJD112-001

MJD112-001 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK INSERTION MOUNT, 75-TUBE; MJD112-001

· Categories: IGBT
· Manufacturer: ON Semiconductor
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 969
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Content last revised on May 20, 2023

Manufacturer Part Number: MJD112-001Brand Name: ON SemiconductorPbfree Code: ObsoleteIhs Manufacturer: ON SEMICONDUCTORPackage Description: PLASTIC, CASE 369D-01, DPAK-3Pin Count: 4Manufacturer Package Code: 369ECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 5.13Case Connection: COLLECTORCollector Current-Max (IC): 2 ACollector-Emitter Voltage-Max: 100 VConfiguration: DARLINGTON WITH BUILT-IN DIODE AND RESISTORDC Current Gain-Min (hFE): 200JESD-30 Code: R-PSIP-T3JESD-609 Code: e0Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINEPeak Reflow Temperature (Cel): 240Polarity/Channel Type: NPNPower Dissipation-Max (Abs): 20 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: NOTerminal Finish: Tin/Lead (Sn/Pb)Terminal Form: THROUGH-HOLETerminal Position: SINGLETime 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK INSERTION MOUNT, 75-TUBE