#ON Semiconductor, #MJD117_001, #IGBT_Module, #IGBT, MJD117-001 TRANSISTOR 2 A, 100 V, PNP, Si, POWER TRANSISTOR, PLASTIC, CASE 369D-01, DPAK-3, BIP General Purpose Power; M
Manufacturer Part Number: MJD117-001Rohs Code: NoPart Life Cycle Code: ObsoleteIhs Manufacturer: ON SEMICONDUCTORPackage Description: PLASTIC, CASE 369D-01, DPAK-3Pin Count: 3Manufacturer Package Code: CASE 369D-01ECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 5.17Case Connection: COLLECTORCollector Current-Max (IC): 2 ACollector-Emitter Voltage-Max: 100 VConfiguration: DARLINGTON WITH BUILT-IN DIODE AND RESISTORDC Current Gain-Min (hFE): 200JESD-30 Code: R-PSIP-T3JESD-609 Code: e0Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINEPeak Reflow Temperature (Cel): 240Polarity/Channel Type: PNPPower Dissipation-Max (Abs): 20 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: NOTerminal Finish: Tin/Lead (Sn/Pb)Terminal Form: THROUGH-HOLETerminal Position: SINGLETime TRANSISTOR 2 A, 100 V, PNP, Si, POWER TRANSISTOR, PLASTIC, CASE 369D-01, DPAK-3, BIP General Purpose Power