#ON Semiconductor, #MJE702G, #IGBT_Module, #IGBT, MJE702G 4.0 A, 80 V PNP Darlington Bipolar Power Transistor, TO-225, 500-BLKBX; MJE702G
Manufacturer Part Number: MJE702GBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPart Package Code: TO-225Package Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3Manufacturer Package Code: 77-09ECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 0.64Additional Feature: BUILT IN BIAS RESISTORCollector Current-Max (IC): 4 ACollector-Emitter Voltage-Max: 80 VConfiguration: DARLINGTON WITH BUILT-IN DIODE AND RESISTORDC Current Gain-Min (hFE): 750JEDEC-95 Code: TO-225JESD-30 Code: R-PSFM-T3JESD-609 Code: e3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): 260Polarity/Channel Type: PNPPower Dissipation-Max (Abs): 40 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: NOTerminal Finish: Tin (Sn)Terminal Form: THROUGH-HOLETerminal Position: SINGLETime 4.0 A, 80 V PNP Darlington Bipolar Power Transistor, TO-225, 500-BLKBX