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IXYS MKI50-12E7

  • MKI50-12E7

MKI50-12E7 Insulated Gate Bipolar Transistor, 90A I(C), 1200V V(BR)CES, N-Channel, MODULE-17; MKI50-12E7

· Categories: IGBT
· Manufacturer: IXYS
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 928
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Content last revised on May 22, 2023

Manufacturer Part Number: MKI50-12E7Rohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPart Package Code: MODULEPackage Description: MODULE-17Pin Count: 17Manufacturer: IXYS CorporationRisk Rank: 5.8Additional Feature: UL REGONIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 90 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-P8Number of Elements: 4Number of Terminals: 8Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 350 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: PIN/PEGTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 90A I(C), 1200V V(BR)CES, N-Channel, MODULE-17

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