Diodes Inc MMBT5551-7

  • MMBT5551-7

MMBT5551-7 Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3; MMBT5551-7

· Categories: IGBT
· Manufacturer: Diodes Inc
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 1215
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Content last revised on May 4, 2023

Manufacturer Part Number: MMBT5551-7Rohs Code: NoPart Life Cycle Code: ObsoleteIhs Manufacturer: DIODES INCPackage Description: SMALL OUTLINE, R-PDSO-G3Pin Count: 3ECCN Code: EAR99Manufacturer: Diodes IncorporatedRisk Rank: 5.38Collector Current-Max (IC): 0.2 ACollector-Emitter Voltage-Max: 160 VConfiguration: SINGLEDC Current Gain-Min (hFE): 30JESD-30 Code: R-PDSO-G3JESD-609 Code: e0Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 235Polarity/Channel Type: NPNQualification Status: Not QualifiedSurface Mount: YESTerminal Finish: Tin/Lead (Sn85Pb15)Terminal Form: GULL WINGTerminal Position: DUALTime Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3