#ON Semiconductor, #MMBV109LT3G, #IGBT_Module, #IGBT, MMBV109LT3G VHF BAND, 29pF, 30V, SILICON, VARIABLE CAPACITANCE DIODE, TO-236AB, LEAD FREE, CASE 318-08, TO-236, 3 PIN; M
Manufacturer Part Number: MMBV109LT3GRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: ON SEMICONDUCTORPart Package Code: SOT-23Package Description: R-PDSO-G3Pin Count: 3Manufacturer Package Code: CASE 318-08ECCN Code: EAR99HTS Code: 8541.10.00.80Manufacturer: ON SemiconductorRisk Rank: 5.16Additional Feature: HIGH RELIABILITYBreakdown Voltage-Min: 30 VConfiguration: SINGLEDiode Cap Tolerance: 10.34%Diode Capacitance Ratio-Min: 5Diode Capacitance-Nom: 29 pFDiode Element Material: SILICONDiode Type: VARIABLE CAPACITANCE DIODEFrequency Band: VERY HIGH FREQUENCYJEDEC-95 Code: TO-236ABJESD-30 Code: R-PDSO-G3JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Power Dissipation-Max: 0.2 WQualification Status: Not QualifiedQuality Factor-Min: 200Rep Pk Reverse Voltage-Max: 30 VSubcategory: VaractorsSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime VHF BAND, 29pF, 30V, SILICON, VARIABLE CAPACITANCE DIODE, TO-236AB, LEAD FREE, CASE 318-08, TO-236, 3 PIN