#Rohm Semiconductor, #MP6M12TCR, #IGBT_Module, #IGBT, MP6M12TCR Power Field-Effect Transistor, 5A I(D), 30V, 0.063ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxid
Manufacturer Part Number: MP6M12TCRPart Life Cycle Code: ObsoleteIhs Manufacturer: Rohm CO LTDPackage Description: SMALL OUTLINE, R-PDSO-F6ECCN Code: EAR99Manufacturer: Rohm SemiconductorRisk Rank: 5.83Case Connection: DRAINConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (ID): 5 ADrain-source On Resistance-Max: 0.063 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-F6Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPolarity/Channel Type: N-CHANNEL AND P-CHANNELPulsed Drain Current-Max (IDM): 12 ASurface Mount: YESTerminal Form: FLATTerminal Position: DUALTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor, 5A I(D), 30V, 0.063ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MPT6, 6 PIN