#Microsemi Power Products Group, #MPA201, #IGBT_Module, #IGBT, MPA201 RF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, 55AU, 2 PIN; M
Manufacturer Part Number: MPA201Pbfree Code: NoPart Life Cycle Code: ObsoleteIhs Manufacturer: MICROSEMI CORPPackage Description: FLANGE MOUNT, R-CDFM-F2Pin Count: 2ECCN Code: EAR99Manufacturer: Microsemi CorporationRisk Rank: 5.86Additional Feature: HIGH RELIABILITYCollector Current-Max (IC): 0.3 ACollector-Base Capacitance-Max: 3 pFCollector-Emitter Voltage-Max: 22 VConfiguration: SINGLEDC Current Gain-Min (hFE): 20Highest Frequency Band: ULTRA HIGH FREQUENCY BANDJESD-30 Code: R-CDFM-F2JESD-609 Code: e0Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 200 °CPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: NPNPower Dissipation-Max (Abs): 6 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: TIN LEADTerminal Form: FLATTerminal Position: DUALTime RF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, 55AU, 2 PIN