#Freescale Semiconductor, #MRF6V10010NR4, #IGBT_Module, #IGBT, MRF6V10010NR4 L BAND, Si, N-CHANNEL, RF POWER, MOSFET; MRF6V10010NR4
Manufacturer Part Number: MRF6V10010NR4Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: NXP SEMICONDUCTORSPackage Description: CHIP CARRIER, R-PQCC-N4ECCN Code: EAR99HTS Code: 8541.29.00.75Manufacturer: NXP SemiconductorsRisk Rank: 1.47Case Connection: SOURCEConfiguration: SINGLEDS Breakdown Voltage-Min: 100 VFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: L BANDJESD-30 Code: R-PQCC-N4JESD-609 Code: e3Moisture Sensitivity Level: 3Number of Elements: 1Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 200 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: CHIP CARRIERPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: NO LEADTerminal Position: QUADTime L BAND, Si, N-CHANNEL, RF POWER, MOSFET