#Freescale Semiconductor, #MRF6V2150NR1, #IGBT_Module, #IGBT, MRF6V2150NR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270; MRF6V2150NR1
Manufacturer Part Number: MRF6V2150NR1Rohs Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: NXP SEMICONDUCTORSPackage Description: FLANGE MOUNT, R-PDFM-F4ECCN Code: EAR99HTS Code: 8541.29.00.75Manufacturer: NXP SemiconductorsRisk Rank: 6.88Case Connection: SOURCEConfiguration: SINGLEDS Breakdown Voltage-Min: 110 VFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: ULTRA HIGH FREQUENCY BANDJEDEC-95 Code: TO-270JESD-30 Code: R-PDFM-F4JESD-609 Code: e3Moisture Sensitivity Level: 3Number of Elements: 1Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 225 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: FLATTerminal Position: DUALTime UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270