#Freescale Semiconductor, #MRF8P20160HR3, #IGBT_Module, #IGBT, MRF8P20160HR3 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET; MRF8P20160HR3
Manufacturer Part Number: MRF8P20160HR3Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: NXP SEMICONDUCTORSPackage Description: FLANGE MOUNT, R-XDFM-F4ECCN Code: EAR99HTS Code: 8541.29.00.75Manufacturer: NXP SemiconductorsRisk Rank: 5.22Case Connection: SOURCEConfiguration: SEPARATE, 2 ELEMENTSDS Breakdown Voltage-Min: 65 VFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: L BANDJESD-30 Code: R-XDFM-F4Number of Elements: 2Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 225 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Form: FLATTerminal Position: DUALTime 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET