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IXYS MUBW40-12T7 IGBT Module

#IXYS, #MUBW40_12T7, #IGBT_Module, #IGBT, MUBW40-12T7 Insulated Gate Bipolar Transistor, 62A I(C), 1200V V(BR)CES, N-Channel, MODULE-24; MUBW40-12T7

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 1967
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MUBW40-12T7 Specification

Sell MUBW40-12T7, #IXYS #MUBW40-12T7 Stock, MUBW40-12T7 Insulated Gate Bipolar Transistor, 62A I(C), 1200V V(BR)CES, N-Channel, MODULE-24; MUBW40-12T7, #IGBT_Module, #IGBT, #MUBW40_12T7
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/mubw40-12t7.html

Manufacturer Part Number: MUBW40-12T7Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X20Pin Count: 24Manufacturer: IXYS CorporationRisk Rank: 5.72Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 62 ACollector-Emitter Voltage-Max: 1200 VConfiguration: COMPLEXGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X20JESD-609 Code: e3Number of Elements: 7Number of Terminals: 20Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 220 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrierTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 62A I(C), 1200V V(BR)CES, N-Channel, MODULE-24

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