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IXYS MUBW45-12T6K IGBT Module

#IXYS, #MUBW45_12T6K, #IGBT_Module, #IGBT, MUBW45-12T6K Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, E1-PACK-25; MUBW45-12T6K

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 1799
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MUBW45-12T6K Specification

Sell MUBW45-12T6K, #IXYS #MUBW45-12T6K Stock, MUBW45-12T6K Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, E1-PACK-25; MUBW45-12T6K, #IGBT_Module, #IGBT, #MUBW45_12T6K
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/mubw45-12t6k.html

Manufacturer Part Number: MUBW45-12T6KPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-XUFM-X21Pin Count: 25Manufacturer: IXYS CorporationRisk Rank: 5.72Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 43 ACollector-Emitter Voltage-Max: 1200 VConfiguration: COMPLEXGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X21JESD-609 Code: e3Number of Elements: 7Number of Terminals: 21Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 160 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrierTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, E1-PACK-25

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