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MUBW6-06A6 Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, MODULE-25; MUBW6-06A6
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    Discrete Semiconductor

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Datasheets:MUBW6-06A6Standard Package:10Category:Discrete Semiconductor ProductsFamily:IGBTs - ModulesSeries:-IGBT Type:NPTConfiguration:Three Phase Inverter with BrakeVoltage - Collector Emitter Breakdown (Max):600VVce(on) (Max) @ Vge, Ic:2.5V @ 15V, 4ACurrent - Collector (Ic) (Max):7ACurrent - Collector Cutoff (Max):10µAInput Capacitance (Cies) @ Vce:0.34nF @ 25VPower - Max:38WInput:Three Phase Bridge RectifierNTC Thermistor:YesMounting Type:Chassis MountPackage / Case:E1Supplier Device Package:E1
IXYS MUBW6-06A6 New Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, MODULE-25, MUBW6-06A6 pictures, MUBW6-06A6 price, MUBW6-06A6 supplier
Manufacturer Part Number: MUBW6-06A6
Pbfree Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer: IXYS CORP
Part Package Code: MODULE
Package Description: FLANGE MOUNT, R-XUFM-X25
Pin Count: 25
Manufacturer: IXYS Corporation
Risk Rank: 5.72
Additional Feature: FAST
Case Connection: ISOLATED
Collector Current-Max (IC): 7 A
Collector-Emitter Voltage-Max: 600 V
Configuration: COMPLEX
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X25
JESD-609 Code: e3
Number of Elements: 7
Number of Terminals: 25
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 38 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Finish: Matte Tin (Sn)
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, MODULE-25

Shunlongwei Inspected every MUBW6-06A6 before Ship, All MUBW6-06A6 with 6 months warranty.

Shunlongwei Co. Ltd.

Contact: Alice Peng



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