#GeneSiC Semiconductor, #MUR20060CTR, #IGBT_Module, #IGBT, MUR20060CTR 600V 200A Silicon Super Fast Recovery Rectifier in Twin Tower Package; MUR20060CTR
Manufacturer Part Number: MUR20060CTRPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: GENESIC SEMICONDUCTOR INCManufacturer: GeneSic Semiconductor IncRisk Rank: 5.54Application: SUPER FAST RECOVERYCase Connection: ANODEConfiguration: COMMON ANODE, 2 ELEMENTSDiode Element Material: SILICONDiode Type: RECTIFIER DIODEForward Voltage-Max (VF): 1.7 VJESD-30 Code: R-PUFM-X2Non-rep Pk Forward Current-Max: 400 ANumber of Elements: 2Number of Phases: 1Number of Terminals: 2Operating Temperature-Max: 175 °COperating Temperature-Min: -40 °COutput Current-Max: 100 APackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTRep Pk Reverse Voltage-Max: 600 VReverse Current-Max: 25 µAReverse Recovery Time-Max: 0.11 µsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPER 600V 200A Silicon Super Fast Recovery Rectifier in Twin Tower Package