GeneSiC Semiconductor MURT20060R IGBT Module

Manufacturer Part Number: MURT20060RPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: GENESIC SEMICONDUCTOR INCPackage Description: R-PUFM-X3Manufacturer: GeneSic Semiconductor IncRisk Rank: 5.54Application: SUPER FAST RECOVERYCase Connection: ISOLATEDConfiguration: COMMON ANODE, 2 ELEMENTSDiode Element Material: SILICONDiode Type: RECTIFIER DIODEForward Voltage-Max (VF): 1.7 VJESD-30 Code: R-PUFM-X3Non-rep Pk Forward Current-Max: 2000 ANumber of Elements: 2Number of Phases: 1Number of Terminals: 3Operating Temperature-Max: 150 °COperating Temperature-Min: -55 °COutput Current-Max: 100 APackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTRep Pk Reverse Voltage-Max: 600 VReverse Current-Max: 25 µAReverse Recovery Time-Max: 0.11 µsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPER 600V 200A Silicon Super Fast Recovery Rectifier in Three Tower Package