Content last revised on June 26, 2023
Manufacturer Part Number: MVDF1N05ER2GRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PDSO-G8ECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: ON SemiconductorRisk Rank: 5.83Additional Feature: LOGIC LEVEL COMPATIBLE, ULTRA LOW ON RESISTANCEAvalanche Energy Rating (Eas): 300 mJConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 50 VDrain Current-Max (Abs) (ID): 2 ADrain Current-Max (ID): 2 ADrain-source On Resistance-Max: 0.3 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-G8JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 2 WPulsed Drain Current-Max (IDM): 10 ASubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTransistor Application: SWITCHINGTransistor Element Material: SILICON 2A, 50V, 0.3ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, SOIC-8, CASE 751-07, SOP-8