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IXYS MWI100-06A8

  • MWI100-06A8

MWI100-06A8 Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel, SIXPACK-19; MWI100-06A8

· Categories: IGBT
· Manufacturer: IXYS
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 112
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Content last revised on November 3, 2023

Manufacturer Part Number: MWI100-06A8Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-XUFM-X19Pin Count: 19Manufacturer: IXYS CorporationRisk Rank: 5.7Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 130 ACollector-Emitter Voltage-Max: 600 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X19JESD-609 Code: e3Number of Elements: 6Number of Terminals: 19Operating Temperature-Max: 125 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 410 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrierTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel, SIXPACK-19

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