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IXYS MWI200-06A8 New IGBT Module

#IXYS, #MWI200_06A8, #IGBT_Module, #IGBT, MWI200-06A8 Insulated Gate Bipolar Transistor, 225A I(C), 600V V(BR)CES, N-Channel, SIXPACK-19; MWI200-06A8

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$
· Date Code: 11+
. Available Qty: 164
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MWI200-06A8 Specification

Sell MWI200-06A8, #IXYS #MWI200-06A8 New Stock, MWI200-06A8 Insulated Gate Bipolar Transistor, 225A I(C), 600V V(BR)CES, N-Channel, SIXPACK-19; MWI200-06A8, #IGBT_Module, #IGBT, #MWI200_06A8
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/mwi200-06a8.html

Manufacturer Part Number: MWI200-06A8Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-XUFM-X19Pin Count: 19Manufacturer: IXYS CorporationRisk Rank: 5.69Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 225 ACollector-Emitter Voltage-Max: 600 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X19JESD-609 Code: e3Number of Elements: 6Number of Terminals: 19Operating Temperature-Max: 125 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 675 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrierTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 225A I(C), 600V V(BR)CES, N-Channel, SIXPACK-19

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