#IXYS, #MWI50_06A7, #IGBT_Module, #IGBT, MWI50-06A7 Insulated Gate Bipolar Transistor, 72A I(C), 600V V(BR)CES, N-Channel, MODULE-17; MWI50-06A7
Manufacturer Part Number: MWI50-06A7Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-P11Pin Count: 17Manufacturer: IXYS CorporationRisk Rank: 2.25Additional Feature: ULTRA FAST, LOW SWITCHING LOSS, LOW SATURATION VOLTAGECase Connection: ISOLATEDCollector Current-Max (IC): 72 ACollector-Emitter Voltage-Max: 600 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-P11JESD-609 Code: e3Number of Elements: 6Number of Terminals: 11Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 225 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrierTerminal Form: PIN/PEGTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 72A I(C), 600V V(BR)CES, N-Channel, MODULE-17