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IXYS MWI75-12A8

  • MWI75-12A8
  • MWI75-12A8 Insulated Gate Bipolar Transistor, 125A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-33; MWI75-12A8

    · Categories: IGBT
    · Manufacturer: IXYS
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 300
    MOQ: 1 PC
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    Content last revised on May 19, 2023

    Manufacturer Part Number: MWI75-12A8Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-XUFM-X33Pin Count: 33Manufacturer: IXYS CorporationRisk Rank: 5.6Additional Feature: ULTRA FAST, LOW SWITCHING LOSS, LOW SATURATION VOLTAGECase Connection: ISOLATEDCollector Current-Max (IC): 125 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X33JESD-609 Code: e3Number of Elements: 6Number of Terminals: 33Operating Temperature-Max: 125 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 500 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrierTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 125A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-33