ON Semiconductor NJVMJD112T4G IGBT Module

Manufacturer Part Number: NJVMJD112T4GBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: ,Pin Count: 3Manufacturer Package Code: 369AAECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 5.05Collector Current-Max (IC): 2 AConfiguration: DARLINGTONDC Current Gain-Min (hFE): 1000JESD-609 Code: e3Moisture Sensitivity Level: 1Operating Temperature-Max: 150 °CPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: NPNPower Dissipation-Max (Abs): 20 WSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Tin (Sn)Time 2.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL