ON Semiconductor NJVMJD45H11T4G

  • NJVMJD45H11T4G

NJVMJD45H11T4G 8 A, 80 V PNP Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL; NJVMJD45H11T4G

· Categories: IGBT
· Manufacturer: ON Semiconductor
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Content last revised on May 22, 2023

Manufacturer Part Number: NJVMJD45H11T4GBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PSSO-G2Pin Count: 3Manufacturer Package Code: 369CECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 1.34Case Connection: COLLECTORCollector Current-Max (IC): 8 ACollector-Emitter Voltage-Max: 80 VConfiguration: SINGLEDC Current Gain-Min (hFE): 40JESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: PNPPower Dissipation-Max (Abs): 20 WReference Standard: AEC-Q101Subcategory: Other TransistorsSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: GULL WINGTerminal Position: SINGLETime 8 A, 80 V PNP Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL