#ON Semiconductor, #NJVNJD35N04T4G, #IGBT_Module, #IGBT, NJVNJD35N04T4G 4.0 A, 350 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL; NJVNJD35N04T
Manufacturer Part Number: NJVNJD35N04T4GBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPin Count: 3Manufacturer Package Code: 369CECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 1.49Collector Current-Max (IC): 4 AConfiguration: DARLINGTONDC Current Gain-Min (hFE): 300JESD-609 Code: e3Moisture Sensitivity Level: 1Operating Temperature-Max: 150 °CPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: NPNPower Dissipation-Max (Abs): 45 WSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Tin (Sn)Time 4.0 A, 350 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL