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ON Semiconductor NSBA123TF3T5G New IGBT Module

#ON Semiconductor, #NSBA123TF3T5G, #IGBT_Module, #IGBT, NSBA123TF3T5G PNP Bipolar Digital Transistor (BRT) 50 V, 100 mA, 2.2 k, none, SOT-1123, 1.0x0.6x0.37, 0.35P, 8000-REEL;

· Categories: IGBT Module
· Manufacturer: ON Semiconductor
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 298
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NSBA123TF3T5G Specification

Sell NSBA123TF3T5G, #ON Semiconductor #NSBA123TF3T5G New Stock, NSBA123TF3T5G PNP Bipolar Digital Transistor (BRT) 50 V, 100 mA, 2.2 k, none, SOT-1123, 1.0x0.6x0.37, 0.35P, 8000-REEL; NSBA123TF3T5G, #IGBT_Module, #IGBT, #NSBA123TF3T5G
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URL: https://www.slw-ele.com/nsba123tf3t5g.html

Manufacturer Part Number: NSBA123TF3T5GBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PDSO-F3Pin Count: 3Manufacturer Package Code: 524AAECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 5.72Additional Feature: BUILT IN BIAS RESISTORCollector Current-Max (IC): 0.1 ACollector-Emitter Voltage-Max: 50 VConfiguration: SINGLE WITH BUILT-IN RESISTORDC Current Gain-Min (hFE): 160JESD-30 Code: R-PDSO-F3JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: PNPPower Dissipation-Max (Abs): 0.297 WQualification Status: Not QualifiedSubcategory: BIP General Purpose Small SignalSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: FLATTerminal Position: DUALTime PNP Bipolar Digital Transistor (BRT) 50 V, 100 mA, 2.2 k, none, SOT-1123, 1.0x0.6x0.37, 0.35P, 8000-REEL

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