#ON Semiconductor, #NSBC114YDXV6T5G, #IGBT_Module, #IGBT, NSBC114YDXV6T5G Dual NPN Bipolar Digital Transistor (BRT), SOT-563, 6 LEAD, 8000-REEL; NSBC114YDXV6T5G
Manufacturer Part Number: NSBC114YDXV6T5GBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PDSO-F6Pin Count: 6Manufacturer Package Code: 463A-01ECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 5.29Additional Feature: BUILT IN BIAS RESISTOR RATIO 4.7Collector Current-Max (IC): 0.1 ACollector-Emitter Voltage-Max: 50 VConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTORDC Current Gain-Min (hFE): 80JESD-30 Code: R-PDSO-F6JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: NPNPower Dissipation-Max (Abs): 0.5 WQualification Status: Not QualifiedSubcategory: BIP General Purpose Small SignalSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: FLATTerminal Position: DUALTime Dual NPN Bipolar Digital Transistor (BRT), SOT-563, 6 LEAD, 8000-REEL