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ON Semiconductor NTLJD3115PTAG IGBT Module

#ON Semiconductor, #NTLJD3115PTAG, #IGBT_Module, #IGBT, NTLJD3115PTAG Dual P-Channel Power MOSFET -20V -4.1A 100mΩ, WDFN6 2x2, 0.65P, 3000-REEL; NTLJD3115PTAG

· Categories: IGBT Module
· Manufacturer: ON Semiconductor
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 1966
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NTLJD3115PTAG Specification

Sell NTLJD3115PTAG, #ON Semiconductor #NTLJD3115PTAG Stock, NTLJD3115PTAG Dual P-Channel Power MOSFET -20V -4.1A 100mΩ, WDFN6 2x2, 0.65P, 3000-REEL; NTLJD3115PTAG, #IGBT_Module, #IGBT, #NTLJD3115PTAG
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Manufacturer Part Number: NTLJD3115PTAGBrand Name: ON SemiconductorPbfree Code: End Of LifeIhs Manufacturer: ON SEMICONDUCTORPart Package Code: DFNPackage Description: SMALL OUTLINE, S-PDSO-C6Pin Count: 6Manufacturer Package Code: 506ANECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 5.17Additional Feature: LOGIC LEVEL COMPATIBLECase Connection: DRAINConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 20 VDrain Current-Max (Abs) (ID): 3.3 ADrain Current-Max (ID): 2.3 ADrain-source On Resistance-Max: 0.135 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: S-PDSO-C6JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: SQUAREPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: P-CHANNELPower Dissipation-Max (Abs): 1.5 WPulsed Drain Current-Max (IDM): 20 AQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: C BENDTerminal Position: DUALTime Dual P-Channel Power MOSFET -20V -4.1A 100mΩ, WDFN6 2x2, 0.65P, 3000-REEL

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