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ON Semiconductor NTMD2C02R2G IGBT Module

#ON Semiconductor, #NTMD2C02R2G, #IGBT_Module, #IGBT, NTMD2C02R2G Power MOSFET 2 Amps, 20 Volts, Complimentary SO-8, Dual, SOIC-8 Narrow Body, 2500-REEL; NTMD2C02R2G

· Categories: IGBT Module
· Manufacturer: ON Semiconductor
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 1156
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NTMD2C02R2G Specification

Sell NTMD2C02R2G, #ON Semiconductor #NTMD2C02R2G Stock, NTMD2C02R2G Power MOSFET 2 Amps, 20 Volts, Complimentary SO-8, Dual, SOIC-8 Narrow Body, 2500-REEL; NTMD2C02R2G, #IGBT_Module, #IGBT, #NTMD2C02R2G
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Manufacturer Part Number: NTMD2C02R2GBrand Name: ON SemiconductorPbfree Code: ObsoleteIhs Manufacturer: ON SEMICONDUCTORPart Package Code: SOTPackage Description: LEAD FREE, CASE 751-07, SOIC-8Pin Count: 8Manufacturer Package Code: 751-07ECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 5.76Additional Feature: LOGIC LEVEL COMPATIBLEConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 20 VDrain Current-Max (Abs) (ID): 5.2 ADrain Current-Max (ID): 5.2 ADrain-source On Resistance-Max: 0.043 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-G8JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNEL AND P-CHANNELPower Dissipation-Max (Abs): 2 WPulsed Drain Current-Max (IDM): 48 AQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime Power MOSFET 2 Amps, 20 Volts, Complimentary SO-8, Dual, SOIC-8 Narrow Body, 2500-REEL

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