#ON Semiconductor, #NTMD6601NR2G, #IGBT_Module, #IGBT, NTMD6601NR2G Power MOSFET 80V 1.4A 245 mOhm Dual N-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL; NTMD6601NR2G
Manufacturer Part Number: NTMD6601NR2GBrand Name: ON SemiconductorPbfree Code: ObsoleteIhs Manufacturer: ON SEMICONDUCTORPart Package Code: SOTPackage Description: LEAD FREE, CASE 751-07, SOP-8Pin Count: 8Manufacturer Package Code: 751-07ECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 5.76Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 80 VDrain Current-Max (Abs) (ID): 2.2 ADrain Current-Max (ID): 1.1 ADrain-source On Resistance-Max: 0.215 ΩFET Technology: METAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss): 30 pFJESD-30 Code: R-PDSO-G8JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 1 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime Power MOSFET 80V 1.4A 245 mOhm Dual N-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL