#Diodes Inc, #PB62_F, #IGBT_Module, #IGBT, PB62-F Bridge Rectifier Diode, 1 Phase, 6A, 200V V(RRM), Silicon; PB62-F
Manufacturer Part Number: PB62FRohs Code: NoPart Life Cycle Code: ObsoleteIhs Manufacturer: DIODES INCPackage Description: R-XBFM-W4HTS Code: 8541.10.00.80Manufacturer: Diodes IncorporatedRisk Rank: 5.14Breakdown Voltage-Min: 200 VCase Connection: ISOLATEDConfiguration: BRIDGE, 4 ELEMENTSDiode Element Material: SILICONDiode Type: BRIDGE RECTIFIER DIODEForward Voltage-Max (VF): 1.1 VJESD-30 Code: R-XBFM-W4JESD-609 Code: e0Non-rep Pk Forward Current-Max: 200 ANumber of Elements: 4Number of Phases: 1Number of Terminals: 4Operating Temperature-Max: 150 °COperating Temperature-Min: -65 °COutput Current-Max: 6 APackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDQualification Status: Not QualifiedRep Pk Reverse Voltage-Max: 200 VReverse Current-Max: 0.00001 µAReverse Recovery Time-Max: 0.2 µsSubcategory: Bridge Rectifier DiodesSurface Mount: NOTerminal Finish: Tin/Lead (Sn/Pb)Terminal Form: WIRETerminal Position: BOTTOMTime Bridge Rectifier Diode, 1 Phase, 6A, 200V V(RRM), Silicon