#NIEC, #PD10M441H, #IGBT_Module, #IGBT, PD10M441H Power Field-Effect Transistor, 60A I(D), 450V, 0.085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconduc
Manufacturer Part Number: PD10M441HPart Life Cycle Code: TransferredIhs Manufacturer: NIHON INTER ELECTRONICS CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X7Pin Count: 7Manufacturer: Nihon Inter Electronics CorporationRisk Rank: 5.67Case Connection: ISOLATEDConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTORDS Breakdown Voltage-Min: 450 VDrain Current-Max (ID): 60 ADrain-source On Resistance-Max: 0.085 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-XUFM-X7Number of Elements: 2Number of Terminals: 7Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 170 AQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor, 60A I(D), 450V, 0.085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-7