#STMicroelectronics, #PD20015C, #IGBT_Module, #IGBT, PD20015C 15W 13.6V 2GHz LDMOS in M243 ceramic package; PD20015C
Manufacturer Part Number: PD20015CBrand Name: STMicroelectronicsRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: STMICROELECTRONICSPackage Description: FLANGE MOUNT, R-PDFM-F2Pin Count: 2ECCN Code: EAR99Manufacturer: STMicroelectronicsRisk Rank: 8.57Additional Feature: HIGH RELIABILITYCase Connection: SOURCEConfiguration: SINGLEDS Breakdown Voltage-Min: 40 VDrain Current-Max (Abs) (ID): 7 ADrain Current-Max (ID): 7 AFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: L BANDJESD-30 Code: R-PDFM-F2Number of Elements: 1Number of Terminals: 2Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 200 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 93 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Form: FLATTerminal Position: DUALTime 15W 13.6V 2GHz LDMOS in M243 ceramic package