Content last revised on December 24, 2024
PD55003-E Product details
Description
The PD55003-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55003 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55003’s superior linearity performance makes it an ideal solution for car mobile radio.
The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly
■ Excellent thermal stability
■ Common source configuration
■ POUT = 3 W with 17dB gain @ 500 MHz / 12.5 V
■ New RF plastic package
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)
V(BR)DSS Drain-Source Voltage 40V
VGS Gate-Source Voltage ±20V
ID Drain Current 2.5A
PDISS Power Dissipation (@ Tc = 70°C) 31.7 W
Tj Max. Operating Junction Temperature 165°C
TSTG Storage Temperature -65 to +150°C
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resistance 3.0°C/W
DYNAMIC
P1dB VDD = 12.5 V IDQ = 50 mA f = 500 MHz 3W