#STMicroelectronics, #PD57002S_E, #IGBT_Module, #IGBT, PD57002S-E 2W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package; PD57002S-E
Manufacturer Part Number: PD57002S-EBrand Name: STMicroelectronicsRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: STMICROELECTRONICSPart Package Code: SOTPackage Description: PLASTIC, POWERSO-10RF, 2 PINPin Count: 10ECCN Code: EAR99Manufacturer: STMicroelectronicsRisk Rank: 5.74Additional Feature: HIGH RELIABILITYCase Connection: SOURCEConfiguration: SINGLEDS Breakdown Voltage-Min: 65 VDrain Current-Max (Abs) (ID): 0.25 ADrain Current-Max (ID): 0.25 AFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: ULTRA HIGH FREQUENCY BANDJESD-30 Code: R-PDSO-F2Number of Elements: 1Number of Terminals: 2Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 165 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 4.75 WPower Gain-Min (Gp): 15 dBQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Form: FLATTerminal Position: DUALTime 2W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package