#STMicroelectronics, #PD84001, #IGBT_Module, #IGBT, PD84001 RF Power LDMOS transistor; PD84001
Manufacturer Part Number: PD84001Brand Name: STMicroelectronicsPart Life Cycle Code: ActiveIhs Manufacturer: STMICROELECTRONICSPackage Description: SMALL OUTLINE, R-PDSO-F4Pin Count: 4ECCN Code: EAR99Manufacturer: STMicroelectronicsRisk Rank: 1.53Case Connection: SOURCEConfiguration: SINGLEDS Breakdown Voltage-Min: 18 VDrain Current-Max (Abs) (ID): 1.5 ADrain Current-Max (ID): 1.5 AFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: ULTRA HIGH FREQUENCY BANDJESD-30 Code: R-PDSO-F4JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 6 WPower Gain-Min (Gp): 13 dBQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: FLATTerminal Position: DUALTime RF Power LDMOS transistor