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NIEC PDM1405HA

  • PDM1405HA
  • PDM1405HA Power Field-Effect Transistor, 100A I(D), 500V, 0.04ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,; PDM1405HA

    · Categories: IGBT
    · Manufacturer: NIEC
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 287
    MOQ: 1 PC
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    Content last revised on June 28, 2023

    Manufacturer Part Number: PDM1405HAPart Life Cycle Code: Lifetime BuyIhs Manufacturer: KYOCERA CORPManufacturer: KYOCERA CorporationRisk Rank: 5.35Case Connection: ISOLATEDConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTORDS Breakdown Voltage-Min: 500 VDrain Current-Max (ID): 100 ADrain-source On Resistance-Max: 0.04 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-XUFM-X7Number of Elements: 2Number of Terminals: 7Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 280 AQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor, 100A I(D), 500V, 0.04ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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