#NIEC, #PDM1405HA, #IGBT_Module, #IGBT, PDM1405HA Power Field-Effect Transistor, 100A I(D), 500V, 0.04ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconduc
Manufacturer Part Number: PDM1405HAPart Life Cycle Code: Lifetime BuyIhs Manufacturer: KYOCERA CORPManufacturer: KYOCERA CorporationRisk Rank: 5.35Case Connection: ISOLATEDConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTORDS Breakdown Voltage-Min: 500 VDrain Current-Max (ID): 100 ADrain-source On Resistance-Max: 0.04 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-XUFM-X7Number of Elements: 2Number of Terminals: 7Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 280 AQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor, 100A I(D), 500V, 0.04ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,