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NIEC PDMB100B12C New IGBT Module

#NIEC, #PDMB100B12C, #IGBT_Module, #IGBT, PDMB100B12C Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-7; PDMB100B12C

· Categories: IGBT Module
· Manufacturer: NIEC
· Price: US$
· Date Code: 11+
. Available Qty: 11
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PDMB100B12C Specification

Sell PDMB100B12C, #NIEC #PDMB100B12C New Stock, PDMB100B12C Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-7; PDMB100B12C, #IGBT_Module, #IGBT, #PDMB100B12C
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URL: https://www.slw-ele.com/pdmb100b12c.html

Manufacturer Part Number: PDMB100B12CPart Life Cycle Code: ActiveIhs Manufacturer: KYOCERA CORPPackage Description: FLANGE MOUNT, R-XUFM-X7Manufacturer: KYOCERA CorporationRisk Rank: 5.13Case Connection: ISOLATEDCollector Current-Max (IC): 100 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X7Number of Elements: 2Number of Terminals: 7Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 500 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Element Material: SILICONTurn-off Time-Nom (toff): 800 nsTurn-on Time-Nom (ton): 400 nsVCEsat-Max: 2.4 V Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

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