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NIEC PDMB600A6 New IGBT Module

#NIEC, #PDMB600A6, #IGBT_Module, #IGBT, PDMB600A6 Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel,; PDMB600A6

· Categories: IGBT Module
· Manufacturer: NIEC
· Price: US$
· Date Code: 11+
. Available Qty: 253
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PDMB600A6 Specification

Sell PDMB600A6, #NIEC #PDMB600A6 New Stock, PDMB600A6 Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel,; PDMB600A6, #IGBT_Module, #IGBT, #PDMB600A6
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Manufacturer Part Number: PDMB600A6Part Life Cycle Code: ObsoleteIhs Manufacturer: NIHON INTER ELECTRONICS CORPPackage Description: FLANGE MOUNT, R-XUFM-X7Manufacturer: Nihon Inter Electronics CorporationRisk Rank: 5.84Case Connection: ISOLATEDCollector Current-Max (IC): 600 ACollector-Emitter Voltage-Max: 600 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X7Number of Elements: 2Number of Terminals: 7Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 2080 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Element Material: SILICONTurn-off Time-Nom (toff): 600 nsTurn-on Time-Nom (ton): 450 nsVCEsat-Max: 2.6 V Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel,

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