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NXP PDTA115ET215 IGBT Module

PDTA115ET215

PDTA115ET215 PDTA115E series - PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm TO-236 3-Pin; PDTA115ET215

· Categories: IGBT Module
· Manufacturer: NXP
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 686
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PDTA115ET215 Specification

Manufacturer Part Number: PDTA115ET,215Brand Name: NexperiaPart Life Cycle Code: ActiveIhs Manufacturer: NEXPERIAPart Package Code: TO-236Package Description: PLASTIC PACKAGE-3Pin Count: 3Manufacturer Package Code: SOT23ECCN Code: EAR99Manufacturer: NexperiaRisk Rank: 0.94Additional Feature: BUILT-IN BIAS RESISTOR RATIO IS 1Collector Current-Max (IC): 0.02 ACollector-Emitter Voltage-Max: 50 VConfiguration: SINGLE WITH BUILT-IN RESISTORDC Current Gain-Min (hFE): 80JEDEC-95 Code: TO-236ABJESD-30 Code: R-PDSO-G3JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: PNPPower Dissipation-Max (Abs): 0.25 WQualification Status: Not QualifiedSubcategory: BIP General Purpose Small SignalSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime PDTA115E series - PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm TO-236 3-Pin

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