#NIEC, #PHMB800A6, #IGBT_Module, #IGBT, PHMB800A6 Insulated Gate Bipolar Transistor, 800A I(C), 600V V(BR)CES, N-Channel; PHMB800A6
Manufacturer Part Number: PHMB800A6Part Life Cycle Code: ObsoleteIhs Manufacturer: NIHON INTER electronicS CORPPackage Description: FLANGE MOUNT, R-XUFM-X4Manufacturer: Nihon Inter Electronics CorporationRisk Rank: 5.84Case Connection: ISOLATEDCollector Current-Max (IC): 800 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X4Number of Elements: 1Number of Terminals: 4Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 2700 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Element Material: SILICONTurn-off Time-Nom (toff): 600 nsTurn-on Time-Nom (ton): 450 nsVCEsat-Max: 2.6 V Insulated Gate Bipolar Transistor, 800A I(C), 600V V(BR)CES, N-Channel