NIEC PRHMB150B12A IGBT Module

Manufacturer Part Number: PRHMB150B12A

Part Life Cycle Code: Active

Ihs Manufacturer: KYOCERA CORP

Package Description: FLANGE MOUNT, R-XUFM-X5

Manufacturer: KYOCERA Corporation

Risk Rank: 5.16

Case Connection: ISOLATED

Collector Current-Max (IC): 150 A

Collector-Emitter Voltage-Max: 1200 V

Configuration: SINGLE WITH BUILT-IN DIODE

Gate-Emitter Voltage-Max: 20 V

JESD-30 Code: R-XUFM-X5

Number of Elements: 1

Number of Terminals: 5

Operating Temperature-Max: 150 °C

Package Body Material: UNSPECIFIED

Package Shape: RECTANGULAR

Package Style: FLANGE MOUNT

Polarity/Channel Type: N-CHANNEL

Power Dissipation-Max (Abs): 730 W

Qualification Status: Not Qualified

Subcategory: Insulated Gate BIP Transistors

Surface Mount: NO

Terminal Form: UNSPECIFIED

Terminal Position: UPPER

Transistor Application: POWER CONTROL

Transistor Element Material: SILICON

Turn-off Time-Nom (toff): 800 ns

Turn-on Time-Nom (ton): 400 ns

VCEsat-Max: 2.4 V

Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-5