Scan Part Number

Tap the focus box or CAPTURE to scan the part number.

Pinch screen or tap 1.4x button to zoom.

Recognizing Part Number...

NIEC PRHMB150B12A

PRHMB150B12A Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-5; PRHMB150B12A

· Categories: IGBT
· Manufacturer: NIEC
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
Submit RFQ to Get Price
· Date Code: Please Verify on Quote
. Available Qty: 172
MOQ: 1 PC
Express Shipping
90-Day Warranty
1-2 Days Lead Time
100% Tested
Whatsapp: 0086 189 2465 1869

Content last revised on September 10, 2026

Manufacturer Part Number: PRHMB150B12A
Part Life Cycle Code: Active
Ihs Manufacturer: KYOCERA CORP
Package Description: FLANGE MOUNT, R-XUFM-X5
Manufacturer: KYOCERA Corporation
Risk Rank: 5.16
Case Connection: ISOLATED
Collector Current-Max (IC): 150 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: SINGLE WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X5
Number of Elements: 1
Number of Terminals: 5
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 730 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Transistor Application: POWER CONTROL
Transistor Element Material: SILICON
Turn-off Time-Nom (toff): 800 ns
Turn-on Time-Nom (ton): 400 ns
VCEsat-Max: 2.4 V
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-5

More Related Parts