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NIEC PTMB100A6C New IGBT Module

#NIEC, #PTMB100A6C, #IGBT_Module, #IGBT, PTMB100A6C Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel; PTMB100A6C

· Categories: IGBT Module
· Manufacturer: NIEC
· Price: US$
· Date Code: 11+
. Available Qty: 251
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PTMB100A6C Specification

Sell PTMB100A6C, #NIEC #PTMB100A6C New Stock, PTMB100A6C Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel; PTMB100A6C, #IGBT_Module, #IGBT, #PTMB100A6C
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Manufacturer Part Number: PTMB100A6CPart Life Cycle Code: ObsoleteIhs Manufacturer: NIHON INTER ELECTRONICS CORPPackage Description: FLANGE MOUNT, R-XUFM-X39Manufacturer: Nihon Inter Electronics CorporationRisk Rank: 5.84Case Connection: ISOLATEDCollector Current-Max (IC): 100 ACollector-Emitter Voltage-Max: 600 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X39Number of Elements: 6Number of Terminals: 39Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Element Material: SILICONTurn-off Time-Nom (toff): 650 nsTurn-on Time-Nom (ton): 400 nsVCEsat-Max: 2.6 V Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel

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