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NIEC PTMB150A6C

  • PTMB150A6C

PTMB150A6C Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel; PTMB150A6C

· Categories: IGBT
· Manufacturer: NIEC
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 262
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Content last revised on May 19, 2023

Manufacturer Part Number: PTMB150A6CPart Life Cycle Code: ObsoleteIhs Manufacturer: NIHON INTER ELECTRONICS CORPPackage Description: FLANGE MOUNT, R-XUFM-X39Manufacturer: Nihon Inter Electronics CorporationRisk Rank: 5.84Case Connection: ISOLATEDCollector Current-Max (IC): 150 ACollector-Emitter Voltage-Max: 600 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X39Number of Elements: 6Number of Terminals: 39Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 415 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Element Material: SILICONTurn-off Time-Nom (toff): 450 nsTurn-on Time-Nom (ton): 250 nsVCEsat-Max: 2.6 V Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel

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