#PRX, #QIR0620001, #IGBT_Module, #IGBT, QIR0620001 Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, PLASTIC PACKAGE-7; QIR0620001
Manufacturer Part Number: QIR0620001Pbfree Code: NoPart Life Cycle Code: ActiveIhs Manufacturer: Powerex INCPackage Description: FLANGE MOUNT, R-PUFM-X7Pin Count: 7Manufacturer: Powerex Power SemiconductorsRisk Rank: 5.81Case Connection: ISOLATEDCollector Current-Max (IC): 200 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODE AND RESISTORGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-PUFM-X7Number of Elements: 1Number of Terminals: 7Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 1100 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, PLASTIC PACKAGE-7