#PRX, #QJS0512001, #IGBT_Module, #IGBT, QJS0512001 Power Field-Effect Transistor, 120A I(D), 500V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semicond
Manufacturer Part Number: QJS0512001Pbfree Code: NoPart Life Cycle Code: ObsoleteIhs Manufacturer: Powerex INCPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X5Pin Count: 5Manufacturer: Powerex Power SemiconductorsRisk Rank: 5.92Case Connection: ISOLATEDConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 500 VDrain Current-Max (Abs) (ID): 120 ADrain Current-Max (ID): 120 ADrain-source On Resistance-Max: 0.025 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-XUFM-X5Number of Elements: 1Number of Terminals: 5Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSubcategory: FET General Purpose PowersSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Power Field-Effect Transistor, 120A I(D), 500V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-5