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MITSUBISHI QM200HC-M

  • QM200HC-M
  • QM200HC-M Power Bipolar Transistor, 200A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin,; QM200HC-M

    · Categories: IGBT
    · Manufacturer: MITSUBISHI
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 241
    MOQ: 1 PC
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    Content last revised on May 4, 2023

    Manufacturer Part Number: QM200HC-MPart Life Cycle Code: ActiveIhs Manufacturer: Mitsubishi ELECTRIC CORPPackage Description: FLANGE MOUNT, R-PUFM-X4Manufacturer: Mitsubishi ElectricRisk Rank: 5.72Additional Feature: BUILT IN BIAS RESISTORCollector Current-Max (IC): 200 AConfiguration: DARLINGTON WITH BUILT-IN DIODE AND RESISTORDC Current Gain-Min (hFE): 100Fall Time-Max (tf): 3000 nsJESD-30 Code: R-PUFM-X4Number of Elements: 1Number of Terminals: 4Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNPower Dissipation-Max (Abs): 830 WQualification Status: Not QualifiedSubcategory: BIP General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Element Material: SILICONVCEsat-Max: 2 V Power Bipolar Transistor, 200A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin,